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SC-TCB2235AC Blue LED Chip
产品概述

1. Product Name:  SC-TCB2235AC                                


2. Features: 

(1) High radiant flux.

(2) Long operation life.

(3) Lambertian radiation.

(4) Lighting applications.


3. Physical Characteristics: 

(1) Size:

Chip size: 560±25 μm × 890±25 μm

Chip thickness: 200±10 μm

P bonding pad: 70±10 μm

N bonding pad: 70±10 μm

(2) Metallization:

P electrode: Au alloy

N electrode: Au alloy

(3) Structure:

Refer to the drawing.


4. Electro-Optical Characteristics (Ta=25oC):

Parameter

Symbol

Condition

Min.

Typ.

Max.

Unit

Forward Voltage

VF1

IF = 150 mA


3.1

3.4

V

VF3

IF = 10μA

2.0

-

-

V

Reverse Current

IR

VR = 10 V

-

-

1

μA

Dominant Wavelength

λd

IF = 150 mA

445

-

460

nm

Spectra Half Width

λH

IF = 150 mA

-

18

-

nm

Light Output Power

PO

IF = 150 mA

200

-

-

mW

AntiElectro-Static-Discharge

ESD

HBM

2



KV

Note:

(1) ESD protection during chip handling is strongly recommended.

(2) All measurements are done on chip form with SINO CRYSTAL’s standard testing equipment.

(3) Dominant wavelength measurement allows a tolerance of ±1nm.

(4) Radiant flux measurement allows a tolerance of ±5%.

(5) Customer’s special requirements are also welcome.


5. Absolute Maximum Ratings:

Parameter

Symbol

Condition

Rating

Unit

Forward DC Current

IF

T= 25oC

≤ 240

mA

Reverse Voltage

VR

T= 25oC

≤10

V

Junction Temperature

Tj

-

≤120

oC

Storage Temperature

Tstg

Chip

 -40~85

oC

Chip-on-tape / Storage

5~35

oC

Chip-on-tape / Transportation

-20~65

oC

Temperature during Packaging

-

-

260 (<5sec)

oC



SC-TCB2235AC Blue LED Chip

产品概述

1. Product Name:  SC-TCB2235AC                                


2. Features: 

(1) High radiant flux.

(2) Long operation life.

(3) Lambertian radiation.

(4) Lighting applications.


3. Physical Characteristics: 

(1) Size:

Chip size: 560±25 μm × 890±25 μm

Chip thickness: 200±10 μm

P bonding pad: 70±10 μm

N bonding pad: 70±10 μm

(2) Metallization:

P electrode: Au alloy

N electrode: Au alloy

(3) Structure:

Refer to the drawing.


4. Electro-Optical Characteristics (Ta=25oC):

Parameter

Symbol

Condition

Min.

Typ.

Max.

Unit

Forward Voltage

VF1

IF = 150 mA


3.1

3.4

V

VF3

IF = 10μA

2.0

-

-

V

Reverse Current

IR

VR = 10 V

-

-

1

μA

Dominant Wavelength

λd

IF = 150 mA

445

-

460

nm

Spectra Half Width

λH

IF = 150 mA

-

18

-

nm

Light Output Power

PO

IF = 150 mA

200

-

-

mW

AntiElectro-Static-Discharge

ESD

HBM

2



KV

Note:

(1) ESD protection during chip handling is strongly recommended.

(2) All measurements are done on chip form with SINO CRYSTAL’s standard testing equipment.

(3) Dominant wavelength measurement allows a tolerance of ±1nm.

(4) Radiant flux measurement allows a tolerance of ±5%.

(5) Customer’s special requirements are also welcome.


5. Absolute Maximum Ratings:

Parameter

Symbol

Condition

Rating

Unit

Forward DC Current

IF

T= 25oC

≤ 240

mA

Reverse Voltage

VR

T= 25oC

≤10

V

Junction Temperature

Tj

-

≤120

oC

Storage Temperature

Tstg

Chip

 -40~85

oC

Chip-on-tape / Storage

5~35

oC

Chip-on-tape / Transportation

-20~65

oC

Temperature during Packaging

-

-

260 (<5sec)

oC



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